| Nanoscale Transistors: Device Physics, Modeling and Simulation |  | Authors: Mark Lundstrom, Jing Guo
Publisher: Springer
Category: Book
List Price: $115.00
Buy New: $82.00
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Seller: planet_books
Sales Rank: 2,137,030
Media: Hardcover
Edition: 1
Pages: 232
Number Of Items: 1
Shipping Weight (lbs): 1.1
Dimensions (in): 9.5 x 6.5 x 0.7
ISBN: 0387280022
Dewey Decimal Number: 621.381528
EAN: 9780387280028
ASIN: 0387280022
Publication Date: December 9, 2005
Availability: Usually ships in 1-2 business days
Condition: Brand New Book. Mint condition! May have some very minor shelf wear, if any. Excellent Customer Service! Easy Returns.
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Product Description
To push MOSFETs to their scaling limits and to explore devices that may complement or even replace them at molecular scale, a clear understanding of device physics at nanometer scale is necessary. Nanoscale Transistors provides a description on the recent development of theory, modeling, and simulation of nanotransistors for electrical engineers, physicists, and chemists working on nanoscale devices. Simple physical pictures and semi-analytical models, which were validated by detailed numerical simulations, are provided for both evolutionary and revolutionary nanotransistors. After basic concepts are reviewed, the text summarizes the essentials of traditional semiconductor devices, digital circuits, and systems to supply a baseline against which new devices can be assessed. A nontraditional view of the MOSFET using concepts that are valid at nanoscale is developed and then applied to nanotube FET as an example of how to extend the concepts to revolutionary nanotransistors. This practical guide then explore the limits of devices by discussing conduction in single molecules
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